Fabrication and Characterization of Micro and Nano Scale SiC UV Photodetectors – December 2012
L Östlund, Q Wang, W Kaplan, S Lourdudoss –Royal Institute of Technology, Stockholm
The focus of this master thesis work is on the fabrication of micro- and nano-scale metal semiconductor-metal silicon carbide (SiC) UV photodetectors and subsequent electrical and optical evaluation of the fabricated devices. The UV photodetectors have significant potential to address the needs of many applications such as detection of corona discharge and flames, industrial machine viewing, and bacteria in water or paper mills. Micro-scale devices in 4H-SiC and 6H-SiC have been fabricated successfully with good photo response and low dark current. Reduction in size of the 4H-SiC UV detectors from micro-scale to nano-scale has been achieved by the use of nano imprint lithography (NIL). The performance of these nano-devices have been characterized, and experiment results reveal good photo sensitivity at very low applied biases…Before device fabrication, the room temperature absorbance of the 4H- and 6H-SiC wafers were measured at normal incidence using a StellarNet EPP2000-UVN-SR spectrometer, and their absorbance spectra are shown in Fig. 2.
Figure 2 Absorbance spectra of the 4H- and 6H-SiC wafers. The measurement points (A, B, C, D and E) were selected from the wafer edge to the centre.
